Before
silicon wafers are placed in a diffusion furnace, they should be cleaned first
to remove impurities and particles from their surfaces. This is known as
"pre-diffusion cleaning."
Pre-diffusion
cleaning can be done using various methods:
·
Standard cleaning 1 (SC1) - The silicon
wafers are cleaned with a solution containing ammonium hydroxide and hydrogen
peroxide, which helps in removing organic particles. However, the metallic ions
are still present in the wafers' surfaces.
·
Standard cleaning 2 (SC2) - After
undergoing the SC1, the silicon wafers are cleaned in a bath containing
hydrochloric acid and hydrogen peroxide. This solution removes leftover
metallic traces from the wafers' surfaces.
2. Piranha
etch clean - This method uses a solution of sulfuric acid and hydrogen
peroxide, which dissolves larger and more stubborn amounts of organic residue
from the wafers.
3.
Megasonic cleaning - Uses cavitation bubbles produced by megasonic waves in a
bath to remove impurities from the wafers. Unlike other methods, megasonic
cleaning doesn't use harsh chemical baths.
4. Ozone
cleaning - Uses deionized (DI) water to rinse the inorganic contaminants away
from the wafers. Then the wafers are placed inside the ozone chamber. The
ozone's powerful oxidizing action converts the organic particles to carbon, leaving
the wafers clean and free from impurities.
Wafers that are not thoroughly cleaned may affect subsequent diffusion steps and negatively impacts the final product. That's why pre-diffusion cleaning is important. Modutek offers a complete line of chemical baths and wet processing equipment that supports the wafer cleaning processes mentioned above. These are designed to provide effective cleaning that will leave silicon wafers particle-free and ready for diffusion.
Contact
Modutek by email Modutek@modutek.com to learn more or
read the complete article titled “Why Pre-Diffusion
Cleans Are Critical in Wafer Cleaning Processing.”
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