The
silicon wet etching of monocrystalline wafers
produces microscopic structures that are used in mechanical devices and
semiconductor parts. When the silicon wafer is immersed in a chemical bath,
only the exposed parts of the silicon wafer are subject to etching. Its other
parts, that are not to be etched, are protected by a mask.
Find additional details
about isotropic and anisotropic silicon wet etching in these documents:
In
isotropic etching, the isotropic etchant etches the silicon wafer equally in
all directions. This means that the wafer is etched downward and sideways under
the mask, resulting in a cavity which usually consists of rounded corners and
edges which are bigger than the opening in the mask.
In
anisotropic etching, the anisotropic etchant such as potassium hydroxide (KOH),
etches at varying speeds in different directions. This means that the etch rate
in the downward direction is faster than the etch rate in the sideways
direction. This leaves to cavities with straight sides and less undercutting of
the mask.
The silicon wafer mask defines where etching can take
place, however, the depth of the etched cavity and its shape can be made by
selecting the right etchant and controlling the etching rate. Isotropic etching is often used to achieve
larger features in the initial stages of the silicon wafer processing, while anisotropic etching
is used to produce straight-edged microstructures in the final stages.
The
etch rate is also a significant factor. It depends on the concentration of the
etchant and the etching solution temperature. Once the etch rate is determined
at a certain temperature, the masked silicon wafer is immersed into the
etchant. The etching should be long enough to produce the required cavity size.
The subsequent wafers will undergo the same process for reproducible results.
Silicon wet etching equipment that includes Modutek’s Teflon tanks can be used to support
both isotropic and anisotropic processes. For processes that are temperature-dependant,
the tank temperature controller provides rapid and accurate heating control.